absolute maximum ratings ( t j = 25c unless otherwise specified ) symbol parameter condition ratings units v drm repetitive peak off-state voltage 600 v i t(rms) r.m.s on-state current t c = 100 c 6.0 a i tsm surge on-state current one cycle, 50hz/60hz, peak, non-repetitive 60/66 a i 2 t i 2 t 18 a 2 s p gm peak gate power dissipation 3.0 w p g(av) average gate power dissipation 0.3 w i gm peak gate current 2.0 a v gm peak gate voltage 10 v t j operating junction temperature - 40 ~ 125 c t stg storage temperature - 40 ~ 150 c mass 2.0 g features repetitive peak off-state voltage : 600v r.m.s on-state current ( i t(rms) = 6 a ) high commutation dv/dt standard gate triggering 3 mode non-isolated type general description this device is suitable for ac switching application, phase control application such as fan speed and temperature mod- ulation control, lighting control and static switching relay. 1/5 DTP6A60 copyright @ d&i semiconducto r co., ltd., all rights reserved. 2.t2 3.gate 1.t1 symbol ? ? ? ? i t(rms) = 6 a i tsm = 60 a bv drm = 600v to-220 1 2 3 triacs / standard gate nov, 2005. rev.0
electrical characteristics symbol items conditions ratings unit min. typ. max. i drm repetitive peak off-state current v d = v drm , single phase, half wave t j = 125 c 1.0 ma v tm peak on-state voltage i t = 8 a, inst. measurement 1.5 v i + gt1 gate trigger current v d = 6 v, r l =10 ? 20 ma i - gt1 ? 20 i - gt3 ? 20 v + gt1 gate trigger voltage v d = 6 v, r l =10 ? 1.5 v v - gt1 ? 1.5 v - gt3 ? 1.5 v gd non-trigger gate voltage t j = 125 c, v d = 1/2 v drm 0.2 v (dv/dt)c critical rate of rise off-state voltage at commutation t j = 125 c, [di/dt]c = -3.0 a/ms, v d =2/3 v drm 5.0 v/ k i h holding current 10 ma r th(j-c) thermal impedance junction to case 2.8 c/w DTP6A60 2/5 ? notes : 1. pulse width ? 300us , duty cycle ? 2%
012345678 90 100 110 120 130 = 90 o = 150 o = 60 o = 30 o = 180 o = 120 o allowable case temperature [ o c] rms on-state current [a] 0.5 1.0 1.5 2.0 2.5 3.0 3.5 10 0 10 1 10 2 125 o c 25 o c on-state current [a] on-state voltage [v] 012345678 0 1 2 3 4 5 6 7 8 9 10 = 90 o = 150 o = 60 o = 30 o = 180 o = 120 o power dissipation [w] rms on-state current [a] -50 0 50 100 150 0.1 1 10 v + gt1 v _ gt1 v gt (t o c) v _ gt3 v gt (25 o c) junction temperature [ o c] 10 0 10 1 10 2 0 10 20 30 40 50 60 70 80 60hz 50hz surge on-state current [a] time (cycles) 10 1 10 2 10 3 10 -1 10 0 10 1 v gd (0.2v) i gm (2a) 25 ? p g (av) (0.3w) p gm (3w) v gm (10v) gate voltage [v] gate current [ma] 3/5 fig 1. gate characteristics fig 2. on-state voltage fig 3. on state current vs. maximum power dissipation fig 4. on state current vs. allowable case temperature fig 5. surge on-sta te current rating ( non-repetitive ) fig 6. gate trigger voltage vs. junction temperature ? ? 2 t 360 t ? : conduction angle ? ? 2 t 360 t ? : conduction angle DTP6A60
10 -2 10 -1 10 0 10 1 10 2 1 10 transient thermal impedance [ o c/w] time (sec) -50 0 50 100 150 0.1 1 10 i _ gt3 i + gt1 i _ gt1 i gt (t o c) i gt (25 o c) junction temperature [ o c] 4/5 fig 8. transient thermal impedance fig 7. gate trigger current vs. junction temperature fig 9. gate trigger characteristics test circuit ? a v 10 ? 6v r g ? ? ? a v 10 ? 6v r g ? ? ? a v 10 ? 6v r g ? ? test procedure test procedure ? test procedure ? DTP6A60
dim. mm inch min. typ. max. min. typ. max. a 9.7 10.1 0.382 0.398 b 6.3 6.7 0.248 0.264 c 9.0 9.47 0.354 0.373 d 12.8 13.3 0.504 0.524 e 1.2 1.4 0.047 0.055 f 1.7 0.067 g 2.5 0.098 h 3.0 3.4 0.118 0.134 i 1.25 1.4 0.049 0.055 j 2.4 2.7 0.094 0.106 k 5.0 5.15 0.197 0.203 l 2.2 2.6 0.087 0.102 m 1.25 1.55 0.049 0.061 n 0.45 0.6 0.018 0.024 o 0.6 1.0 0.024 0.039 3.6 0.142 5/5 DTP6A60 to-220 package dimension 1. t1 2. t2 3. gate a b c i g l 1 m e f h k n o 2 3 j d
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